Invention Grant
- Patent Title: Detachment of a self-supporting layer of silicon <100>
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Application No.: US14412874Application Date: 2013-07-01
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Publication No.: US09698289B2Publication Date: 2017-07-04
- Inventor: Carole Braley , Frédéric Mazen
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1256340 20120703
- International Application: PCT/FR2013/051544 WO 20130701
- International Announcement: WO2014/006316 WO 20140109
- Main IPC: H01L31/04
- IPC: H01L31/04 ; H01L21/762 ; H01L31/18 ; H01L21/265 ; H01L21/324
Abstract:
A method for detaching a self-supporting layer of silicon of crystalline orientation , particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.
Public/Granted literature
- US20150194550A1 DETACHMENT OF A SELF-SUPPORTING LAYER OF SILICON <100> Public/Granted day:2015-07-09
Information query
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