Invention Grant
- Patent Title: Thermally optimized phase change memory cells and methods of fabricating the same
-
Application No.: US14861259Application Date: 2015-09-22
-
Publication No.: US09698346B2Publication Date: 2017-07-04
- Inventor: Mattia Boniardi , Andrea Redaelli
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Biose
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Biose
- Agency: Holland & Hart LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00 ; H01L27/24
Abstract:
A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the thermally insulating region, where the metallic contact layer has a second thermal resistivity lower than the first thermal resistivity.
Public/Granted literature
- US20160013404A1 THERMALLY OPTIMIZED PHASE CHANGE MEMORY CELLS AND METHODS OF FABRICATING THE SAME Public/Granted day:2016-01-14
Information query
IPC分类:
