Invention Grant
- Patent Title: Pixel with increased charge storage
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Application No.: US14688020Application Date: 2015-04-16
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Publication No.: US09699398B2Publication Date: 2017-07-04
- Inventor: Bart Dierickx , Gaozhan Cai
- Applicant: Caeleste CVBA
- Applicant Address: BE Mechelen
- Assignee: CAELESTE CVBA
- Current Assignee: CAELESTE CVBA
- Current Assignee Address: BE Mechelen
- Agency: Workman Nydegger
- Main IPC: H01L27/16
- IPC: H01L27/16 ; H04N5/378 ; H01L27/146 ; H04N5/355 ; H04N5/3745

Abstract:
A pixel circuit comprising a photodiode, a floating diffusion, a transfer gate for electrically connecting the photodiode to the floating diffusion, and a charge storage device, wherein the charge storage device comprises an electrode which is at least partly overlaying the photodiode, and which is configured and adapted to be driven so as to influence the total capacitance of the pixel.
Public/Granted literature
- US20160307947A1 Pixel with Increased Charge Storage Public/Granted day:2016-10-20
Information query
IPC分类: