Invention Grant
- Patent Title: Method for manufacturing single-crystal silicon
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Application No.: US14362368Application Date: 2012-07-10
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Publication No.: US09702055B2Publication Date: 2017-07-11
- Inventor: Hideo Kato , Shinichi Kyufu
- Applicant: Hideo Kato , Shinichi Kyufu
- Applicant Address: DE Munich
- Assignee: SILTRONIC AG
- Current Assignee: SILTRONIC AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: JP2011-283330 20111226
- International Application: PCT/EP2012/063494 WO 20120710
- International Announcement: WO2013/097953 WO 20130704
- Main IPC: C30B15/10
- IPC: C30B15/10 ; C30B15/02 ; C30B15/22 ; C30B29/06 ; C30B35/00
Abstract:
The success rate of multi-pulled single crystal growth by the Czochralski method is enhanced by the use of a melt crucible having an amount of barium on an inner surface thereof which varies inversely with the diameter of the crucible. At least one single crystal is separated from the melt by a free span method.
Public/Granted literature
- US20150040820A1 METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON Public/Granted day:2015-02-12
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