A method for sub-diffraction-limited patterning using a photoswitchable layer is disclosed. A sample of the photoswitchable layer can be selectively exposed to a first wavelength of illumination that includes a super-oscillatory peak. The sample can be selectively exposed to a second wavelength of illumination that does not include the super-oscillatory peak. A region in the sample that corresponds to the super-oscillatory peak and is associated with the second transition state can optionally be converted into a third transition state. The region in the sample at the third transition state can constitute a pattern of an isolated feature with a size that is substantially smaller than a far-field diffraction limit.