Invention Grant
- Patent Title: Bandgap voltage circuit with low-beta bipolar device
-
Application No.: US14288762Application Date: 2014-05-28
-
Publication No.: US09703310B2Publication Date: 2017-07-11
- Inventor: Yong Siang Teo
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G05F3/02
- IPC: G05F3/02 ; G05F3/30
Abstract:
Representative implementations of devices and techniques provide a reduction in the spread of a bandgap voltage of a bandgap reference circuit. The biasing current for a target bipolar device is conditioned by passing it through one or more like bipolar devices prior to biasing the target bipolar device.
Public/Granted literature
- US20150346754A1 BANDGAP VOLTAGE CIRCUIT WITH LOW-BETA BIPOLAR DEVICE Public/Granted day:2015-12-03
Information query
IPC分类:
