A ternary content addressable memory (TCAM) cell may include a first resistive memory element, a second resistive memory element, a third resistive memory element, and a first switching element. The first resistive memory element may be disposed between a true data bit line node and a common node. The second resistive memory element may be disposed between a complement data bit line node and the common node. The third resistive element may be coupled to the common node and a word line node. The first switching element may have a control terminal coupled to the common node.