Invention Grant
- Patent Title: Fin field effect transistor and method for fabricating the same
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Application No.: US15054141Application Date: 2016-02-26
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Publication No.: US09704752B1Publication Date: 2017-07-11
- Inventor: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L27/088 ; H01L21/311 ; H01L21/308
Abstract:
A method for fabricating a fin field effect transistor (FinFET) comprising the following steps is provided. A substrate comprising a plurality of trenches and a plurality of semiconductor fins between the trenches is provided. A plurality of insulators are formed in the trenches. A fin cut process is performed to remove portions of the semiconductor fins until a plurality of concaves are formed between the insulators. A gate stack is formed to partially cover the semiconductor fins and the insulators.
Information query
IPC分类:
