Invention Grant
- Patent Title: Systems and methods for a semiconductor structure having multiple semiconductor-device layers
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Application No.: US14073236Application Date: 2013-11-06
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Publication No.: US09704880B2Publication Date: 2017-07-11
- Inventor: Yi-Tang Lin , Chun-Hsiung Tsai , Clement Hsingjen Wann
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/84
Abstract:
A semiconductor structure having multiple semiconductor-device layers is provided. The semiconductor structure comprises a first buried oxide and a first semiconductor device layer fabricated above the first buried oxide. The first semiconductor device layer comprises a patterned top surface. A blanket layer comprising insulator material is fabricated over the patterned surface. The semiconductor structure further comprises a second buried oxide bonded to the blanket layer and a second semiconductor device layer fabricated above the second buried oxide.
Public/Granted literature
- US20150123203A1 SYSTEMS AND METHODS FOR A SEMICONDUCTOR STRUCTURE HAVING MULTIPLE SEMICONDUCTOR-DEVICE LAYERS Public/Granted day:2015-05-07
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