Invention Grant
- Patent Title: Semiconductor device and a method for forming a semiconductor device
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Application No.: US15041671Application Date: 2016-02-11
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Publication No.: US09704954B2Publication Date: 2017-07-11
- Inventor: Daniel Tutuc , Franz Hirler , Andreas Voerckel , Hans Weber
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Baker Botts L.L.P.
- Priority: DE102015102136 20150213
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/40 ; H01L29/10 ; H01L29/739 ; H01L29/66 ; H01L29/16 ; H01L29/20
Abstract:
A semiconductor device comprises at least one strip-shaped cell compensation region of a vertical electrical element arrangement, at least one strip-shaped edge compensation region and a bridge structure. The at least one strip-shaped cell compensation regions extends into a semiconductor substrate and comprises a first conductivity type. Further, the at least one strip-shaped cell compensation region is connected to a first electrode structure of the vertical electrical element arrangement. The at least one strip-shaped edge compensation region extends into the semiconductor substrate within an edge termination region of the semiconductor device and outside the cell region. Further, the at least one strip-shaped edge compensation region comprises the first conductivity type. The bridge structure electrically connects the at least one strip-shaped edge compensation region with the at least one strip-shaped cell compensation region within the edge termination region.
Public/Granted literature
- US20160240615A1 Semiconductor Device and a Method for Forming a Semiconductor Device Public/Granted day:2016-08-18
Information query
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