Invention Grant
- Patent Title: Semiconductor device including a channel region and method for manufacturing the semiconductor device
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Application No.: US14291724Application Date: 2014-05-30
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Publication No.: US09704985B2Publication Date: 2017-07-11
- Inventor: Yasushi Hamazawa
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-118152 20130604
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12

Abstract:
A semiconductor device of the present invention includes a semiconductor layer, a source region and a drain region formed in a surface of the semiconductor layer, both having a first conductivity type, a plurality of gate trenches each formed so as to extend across the source region and the drain region, in a plan view observed in a direction of a normal to the surface of the semiconductor layer, a channel region of a first conductivity type made of the semiconductor layer sandwiched by the gate trenches adjacent to each other, having a channel length along a direction extending from the drain region to the source region, and a gate electrode buried in the gate trench via a gate insulating film, and the channel region has a thickness in the plan view not more than two times a width of a depletion layer to be generated due to a built-in potential between the channel region and the gate electrode.
Public/Granted literature
- US20140353746A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-12-04
Information query
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