Invention Grant
- Patent Title: Deep ultraviolet light emitting diode
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Application No.: US15069249Application Date: 2016-03-14
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Publication No.: US09705032B2Publication Date: 2017-07-11
- Inventor: Michael Shur , Remigijus Gaska , Jinwei Yang , Alexander Dobrinsky
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: Labatt, LLC
- Main IPC: H01L33/26
- IPC: H01L33/26 ; H01L33/06 ; H01L33/04 ; H01L33/32 ; H01L33/02 ; H01L33/10 ; H01L33/14

Abstract:
A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).
Public/Granted literature
- US20160197233A1 Deep Ultraviolet Light Emitting Diode Public/Granted day:2016-07-07
Information query
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