Invention Grant
- Patent Title: Light-emitting diode, method for manufacturing light-emitting diode, light-emitting diode lamp and illumination device
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Application No.: US14353239Application Date: 2012-10-02
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Publication No.: US09705034B2Publication Date: 2017-07-11
- Inventor: Atsushi Matsumura , Yuu Tokunaga
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-234005 20111025
- International Application: PCT/JP2012/075572 WO 20121002
- International Announcement: WO2013/061735 WO 20130502
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/60 ; H01L33/42 ; H01L33/36 ; H01L33/14 ; H01L33/38 ; H01L33/00 ; H01L33/40 ; H01L33/44 ; H01L21/02

Abstract:
A light-emitting diode, a method of manufacturing the same, a lamp and an illumination device. A light-emitting diode (100) is provided with a compound semiconductor layer (10) including a light-emitting layer (24) provided on a substrate (1); an ohmic contact electrode (7) provided between the substrate and compound semiconductor layer; an ohmic electrode (11) provided on the side of the compound semiconductor layer opposite the substrate; a surface electrode (12) including a branch section (12b) provided so as to cover the surface of the ohmic electrode and a pad section (12a) coupled to the branch section; and a current-blocking portion (13) provided between an under-pad light-emitting layer (24a) arranged in an area of the light-emitting layer that overlaps the pad section (12a) and a light-emitting layer arranged in an area except the area that overlaps the pad section, to prevent current from being supplied to the under-pad light-emitting layer.
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