In a method for stretching a vapor deposition mask including a metal mask in which a slit is formed and a resin mask in which an opening corresponding to a pattern to be produced by vapor deposition is formed at a position overlapping with the slit, a stretching assistance member is overlapped on one surface of the vapor deposition mask, the stretching assistance member is fixed to the vapor deposition mask in at least part of a portion in which the one surface of the vapor deposition mask and the stretching assistance member overlap with each other, and the vapor deposition mask fixed to the stretching assistance member is stretched by pulling the stretching assistance member fixed to the vapor deposition mask.