Invention Grant
- Patent Title: Adaptive fault clearing based on power transistor temperature
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Application No.: US14518311Application Date: 2014-10-20
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Publication No.: US09705310B2Publication Date: 2017-07-11
- Inventor: Hans-Erik Pfitzer , Justin Walraven
- Applicant: Thomas & Betts International, LLC
- Applicant Address: US DE Wilmington
- Assignee: Thomas & Betts International LLC
- Current Assignee: Thomas & Betts International LLC
- Current Assignee Address: US DE Wilmington
- Agency: Taft Stettinius & Hollister LLP
- Main IPC: H02H7/122
- IPC: H02H7/122 ; H02H3/093 ; H03K17/082 ; H02H3/00 ; H02H3/08

Abstract:
A system includes a current measurement unit, an overload timer, and a processing unit. The current measuring unit measures current through a power transistor, and the overload timer measures an overload time associated with the measured current. The processing unit receives a user-specified overload time setting or a user-specified overload amperage setting associated with a protection device connected in series with a load, receives a temperature measurement of a component associated with the power transistor or a measurement of overload time associated with the current, wherein the power transistor supplies the current to the load and the protection device, and selectively turns off the power transistor based on the measured temperature, the measured current through the power transistor, and the user-specified overload amperage setting or based on the measured temperature, the measured overload time, and the user-specified overload time.
Public/Granted literature
- US20150146327A1 ADAPTIVE FAULT CLEARING BASED ON POWER TRANSISTOR TEMPERATURE Public/Granted day:2015-05-28
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