Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14812455Application Date: 2015-07-29
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Publication No.: US09705488B2Publication Date: 2017-07-11
- Inventor: Yoshiaki Toyoda
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-040340 20130301
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H01L29/78 ; H01L29/08 ; H01L29/423 ; H01L27/06 ; H01L27/092 ; H01L27/088 ; H01L29/06 ; H01L29/861

Abstract:
A horizontal MOSFET is arranged in parallel to a horizontal MOSFET and a portion of a return current IL which flows to a linear solenoid flows as a current to the horizontal MOSFET. Therefore, a current which flows to a parasitic transistor is reduced and it is possible to suppress the current which flows to the parasitic transistor provided in the horizontal MOSFET. Since the current which flows to the parasitic transistor is reduced, it is possible to prevent the erroneous operation and breakdown of a semiconductor device forming a synchronous rectification circuit.
Public/Granted literature
- US20150333748A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-11-19
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