Invention Grant
- Patent Title: Process for filling etched holes
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Application No.: US15046239Application Date: 2016-02-17
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Publication No.: US09708183B2Publication Date: 2017-07-18
- Inventor: Angus North , Ronan O'Reilly , Gregory McAvoy
- Applicant: Memjet Technology Ltd.
- Applicant Address: IE
- Assignee: Memjet Technology Limited
- Current Assignee: Memjet Technology Limited
- Current Assignee Address: IE
- Agency: Cooley LLP
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B41J2/16

Abstract:
A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.
Public/Granted literature
- US20160236930A1 PROCESS FOR FILLING ETCHED HOLES Public/Granted day:2016-08-18
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