Invention Grant
- Patent Title: Handling defective non-volatile memory
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Application No.: US15235084Application Date: 2016-08-11
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Publication No.: US09710347B2Publication Date: 2017-07-18
- Inventor: Yaoqiao Li , Zhongyi Zhu , Jianshun Qiu , Guangxu Men
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles E. Bergere
- Priority: CN201510723965 20150922
- Main IPC: G06F11/20
- IPC: G06F11/20 ; G06F3/06 ; G11C29/04 ; G11C29/00

Abstract:
A non-volatile memory (NVM) system has a main NVM sector with multiple memory segments, a redundant NVM sector for storing recovery records, an address-matching circuit having multiple memory sections, each adapted to store a pair of main and substitute addresses, and an NVM controller. The NVM controller is configured to determine if a first memory segment of the main NVM sector is no longer usable and, consequently (i) create a recovery record for storage in the redundant NVM sector that includes the address of the first memory segment and the data associated with the first memory segment, and (ii) add a pair of main and substitute addresses to the address-matching circuit, where the main address is the address of the first memory segment and the substitute address identifies a substitute location for the data associated with the first memory segment.
Public/Granted literature
- US20170083418A1 HANDLING DEFECTIVE NON-VOLATILE MEMORY Public/Granted day:2017-03-23
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