Invention Grant
- Patent Title: Memory device including boosted voltage generator
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Application No.: US15176264Application Date: 2016-06-08
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Publication No.: US09711203B2Publication Date: 2017-07-18
- Inventor: Artur Antonyan
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0120749 20150827
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
A boosted voltage generator may include a difference voltage generator, a first charging circuit, a second charging circuit and a switch circuit. The difference voltage generator generates a difference voltage to a first node, based on a reference voltage and a power supply voltage. The first charging circuit, connected between the first node and a ground voltage, charges the difference voltage therein during a first phase in response to a first pulse signal. The second charging circuit, connected between the first node and the ground voltage, charges the difference voltage therein during a second phase in response to a second pulse signal. The switch circuit, connected to a second node in the first charging circuit, a third node in the second charging circuit and an output node, provides a boosted voltage following a target level to the output node during each of the first phase and the second phase.
Public/Granted literature
- US20170062035A1 MEMORY DEVICE INCLUDING BOOSTED VOLTAGE GENERATOR Public/Granted day:2017-03-02
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