Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14839437Application Date: 2015-08-28
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Publication No.: US09711404B2Publication Date: 2017-07-18
- Inventor: Takeshi Shibata
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2015-052738 20150316
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L29/66 ; H01L21/308 ; H01L21/306 ; H01L21/304 ; H01L21/31 ; H01L21/311 ; H01L29/778 ; H01L29/20 ; H01L29/417 ; H01L21/768
Abstract:
A semiconductor device includes a substrate that includes a first region and a second region adjacent to the first region. The first region has a thickness that is smaller than a thickness of the second region, and a nitride semiconductor layer is provided on the first region of the substrate.
Public/Granted literature
- US20160276222A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-09-22
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