Invention Grant
- Patent Title: Bonding pad structure with dense via array
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Application No.: US14683204Application Date: 2015-04-10
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Publication No.: US09711468B2Publication Date: 2017-07-18
- Inventor: Tsung-Han Tsai , Jung-Chi Jeng , Yueh-Ching Chang , Volume Chien , Huang-Ta Huang , Chi-Cherng Jeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/00 ; H01L23/48 ; H01L23/532

Abstract:
A bonding pad structure comprises a first dielectric layer, a first conductive island in a second dielectric layer over the first dielectric layer and a via array having a plurality of vias in a third dielectric layer over the first conductive island. The structure also comprises a plurality of second conductive islands in a fourth dielectric layer over the via array. The second conductive islands are each separated from one another by a dielectric material of the fourth dielectric layer and in contact with at least one via of the via array. The structure further comprises a substrate over the second conductive islands. The substrate has an opening defined therein that exposes at least one second conductive island. The structure additionally comprises a bonding pad over the substrate. The bonding pad is in contact with the at least one second conductive island through the opening in the substrate.
Public/Granted literature
- US20150214165A1 BONDING PAD STRUCTURE WITH DENSE VIA ARRAY Public/Granted day:2015-07-30
Information query
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