Invention Grant
- Patent Title: Image sensor
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Application No.: US14958987Application Date: 2015-12-04
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Publication No.: US09711554B2Publication Date: 2017-07-18
- Inventor: DooWon Kwon , Taeseok Oh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F.Chau & Associates, LLC
- Priority: KR10-2014-0192107 20141229
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor includes a pixel array chip, a logic chip, and an interposed layer. The interposed layer is disposed on the pixel array chip. The logic chip is disposed on the interposed layer. The interposed layer includes a connecting part, a shielding part, and a metal-diffusion barrier layer. The connecting part electrically connects a first interconnection wire of the pixel array chip and a second interconnection wire of the logic chip. The connecting part includes a first metallic element. The shielding part is disposed spatially apart from the connecting part and electrically grounded to suppress an electrical coupling between the pixel array chip and the logic chip. The shielding part includes a second metallic element. The metal-diffusion barrier layer is disposed on top and bottom surfaces of the interposed layer to limit diffusion of electrical charges to the pixel array chip and the logic chip.
Public/Granted literature
- US20160190198A1 IMAGE SENSOR Public/Granted day:2016-06-30
Information query
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