Invention Grant
- Patent Title: Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment
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Application No.: US14141051Application Date: 2013-12-26
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Publication No.: US09711645B2Publication Date: 2017-07-18
- Inventor: Veeraraghavan S. Basker , Zuoguang Liu , Tenko Yamashita , Chun-chen Yeh
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L29/66 ; H01L21/02
Abstract:
Embodiments are directed to forming a structure comprising at least one fin, a gate, and a spacer, applying an annealing process to the structure to create a gap between the at least one fin and the spacer, and growing an epitaxial semiconductor layer in the gap between the spacer and the at least one fin.
Public/Granted literature
- US20150187577A1 METHOD AND STRUCTURE FOR MULTIGATE FINFET DEVICE EPI-EXTENSION JUNCTION CONTROL BY HYDROGEN TREATMENT Public/Granted day:2015-07-02
Information query
IPC分类:
