Invention Grant
- Patent Title: Front-side emitting mid-infrared light emitting diode fabrication methods
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Application No.: US14645025Application Date: 2015-03-11
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Publication No.: US09711679B2Publication Date: 2017-07-18
- Inventor: Mark S. Miller
- Applicant: Terahertz Device Corporation
- Applicant Address: US UT Salt Lake City
- Assignee: Terahertz Device Corporation
- Current Assignee: Terahertz Device Corporation
- Current Assignee Address: US UT Salt Lake City
- Agency: Ray Quinney & Nebeker, P.C.
- Agent Paul N. Taylor
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L23/00 ; H01L33/40 ; H01L33/46 ; H01L33/04
Abstract:
Methods for fabricating mid-infrared light emitting diodes (LEDs) based upon antimonide-arsenide semiconductor heterostructures and configured into front-side emitting high-brightness LED die and other LED die formats.
Public/Granted literature
- US20150263218A1 FRONT-SIDE EMITTING MID-INFRARED LIGHT EMITTING DIODE FABRICATION METHODS Public/Granted day:2015-09-17
Information query
IPC分类:
