The present disclosure provides a distributed amplifier, including: a drain transmission line; a gate transmission line; GFETs, in which sources of the graphene field-effect transistors are respectively grounded; gates of the graphene field-effect transistors respectively connected with a plurality of first shunt capacitors which are grounded; the gate transmission line is connected with a plurality of first nodes respectively between the gates of the graphene field-effect transistors and the plurality of first shunt capacitors, having a plurality of first inductors respectively between each two first nodes; drains of the graphene field-effect transistors respectively connected with a plurality of second shunt capacitors which are grounded; the drain transmission line is connected with a plurality of second nodes respectively between the drains of the graphene field-effect transistors and the plurality of second shunt capacitors, having a plurality of second inductors respectively between each two second nodes.