Invention Grant
- Patent Title: Passive device cell and fabrication process thereof
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Application No.: US14874888Application Date: 2015-10-05
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Publication No.: US09712130B2Publication Date: 2017-07-18
- Inventor: Ming-Tzong Yang , Cheng-Chou Hung , Tung-Hsing Lee , Wei-Che Huang
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03H7/01
- IPC: H03H7/01 ; H03H3/00 ; H01P1/203 ; H01P7/08

Abstract:
An implementation of the invention is directed to a passive device cell having a substrate layer, and intermediary layer formed above the substrate layer, and a passive device formed above the intermediary layer. The intermediary layer includes a plurality of LC resonators and a plurality of segmented conductive lines, wherein the plurality of segmented conductive lines are disposed between the plurality of LC resonators.
Public/Granted literature
- US20160028359A1 PASSIVE DEVICE CELL AND FABRICATION PROCESS THEREOF Public/Granted day:2016-01-28
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