A drive circuit for a power semiconductor element includes: a voltage-command generation unit that generates a voltage command VGEref, which is a charge command between the gate and emitter terminals of a power semiconductor element; and a subtracter that calculates a deviation voltage Verr between the voltage command VGEref and the voltage between the gate and emitter terminals. The drive circuit also includes: a gate current controller that is input with the deviation voltage Verr and calculates a gate-current command voltage VIGref for determining the gate current that is caused to flow to the gate terminal of the power semiconductor element; a gate-current command limiter that limits the gate-current command voltage VIGref; and a gate-current supply device that is input with an actual gate-current command voltage VIGout and that supplies a gate current to the gate terminal of the power semiconductor element.