Invention Grant
- Patent Title: Semiconductor device including electrostatic protection circuit
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Application No.: US13032333Application Date: 2011-02-22
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Publication No.: US09712165B2Publication Date: 2017-07-18
- Inventor: Mototsugu Okushima
- Applicant: Mototsugu Okushima
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2010-037598 20100223
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H03K19/003

Abstract:
A semiconductor device includes: a first power source (PS1) pad supplied with a PS1 voltage; a PS1 line connected to the PS1 pad; a first ground line (G1); an output circuit operated using the PS1 voltage; a second power source (PS2) pad supplied with a PS2 voltage; a PS2 line connected to the PS2 pad; a second ground line (G2); a signal line connected to an output end of the output circuit; an input circuit connected to the signal line at an input end receiving a signal from the output end and operated using the PS2 voltage; a main protection circuit unit providing discharge routes between the PS1 pad and G1, G1 and G2, and G2 and the PS2 pad; and a sub protection circuit unit. The output circuit includes: a circuit element arranged between the PS1 line and the signal line and able to function as a resistive element.
Public/Granted literature
- US20110205673A1 SEMICONDUCTOR DEVICE INCLUDING ELECTROSTATIC PROTECTION CIRCUIT Public/Granted day:2011-08-25
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