Invention Grant
- Patent Title: Device isolation for III-V substrates
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Application No.: US15076126Application Date: 2016-03-21
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Publication No.: US09716150B2Publication Date: 2017-07-25
- Inventor: Anirban Basu , Guy M. Cohen
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Louis J. Percello
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/205 ; H01L21/02 ; H01L21/3065 ; H01L29/06 ; H01L21/306 ; H01L21/8234 ; H01L21/8252 ; H01L29/207
Abstract:
Techniques for device isolation for III-V semiconductor substrates are provided. In one aspect, a method of fabricating a III-V semiconductor device is provided. The method includes the steps of: providing a substrate having an indium phosphide (InP)-ready layer; forming an iron (Fe)-doped InP layer on the InP-ready layer; forming an epitaxial III-V semiconductor material layer on the Fe-doped InP layer; and patterning the epitaxial III-V semiconductor material layer to form one or more active areas of the device. A III-V semiconductor device is also provided.
Public/Granted literature
- US20160203980A1 Device Isolation for III-V Substrates Public/Granted day:2016-07-14
Information query
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