Invention Grant
- Patent Title: Organic light-emitting diode displays with reduced border area
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Application No.: US15087783Application Date: 2016-03-31
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Publication No.: US09716248B2Publication Date: 2017-07-25
- Inventor: Bhadrinarayana Lalgudi Visweswaran , Zhen Zhang , Warren S. Rieutort-Louis , Tsung-Ting Tsai
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Treyz Law Group, P.C.
- Agent Jason Tsai
- Main IPC: H01L51/54
- IPC: H01L51/54 ; H01L27/32 ; H01L51/00 ; H01L51/52

Abstract:
A display having thin-film transistor (TFT) structures may be used to display images within an active area of the display, which is surrounded by an inactive border area. In order to reduce the inactive area, a TFT passivation layer may be used to help protect conductive routing lines at the outer edge of the border so that encapsulation layers need not be formed all the way to the edge. At least some of the conductive routing lines in the inactive area may be stacked or coupled in parallel to help reduce border width. The TFT passivation layer may also cover the lateral edges of the routing lines to help prevent corrosion during an anode etch. The encapsulation layers may also be formed in a bent portion of the display substrate to help adjust the neutral stress plane such that metal traces formed in the bent portion do not crack.
Public/Granted literature
- US20170179432A1 Organic Light-Emitting Diode Displays with Reduced Border Area Public/Granted day:2017-06-22
Information query
IPC分类: