Invention Grant
- Patent Title: MEMS pressure sensor and method of manufacturing the same
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Application No.: US14984469Application Date: 2015-12-30
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Publication No.: US09718669B2Publication Date: 2017-08-01
- Inventor: Tung-Tsun Chen , Chia-Hua Chu
- Applicant: TAIWAN SEMICODUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81B1/00 ; B81C1/00

Abstract:
A micro-electro mechanical system (MEMS) pressure sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which a first space between the first substrate and the sensing structure is communicated with outside, and a second space between the second substrate and the sensing structure is communicated with or isolated from the outside.
Public/Granted literature
- US20170190567A1 MEMS PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-07-06
Information query
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