Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US15000521Application Date: 2016-01-19
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Publication No.: US09718677B1Publication Date: 2017-08-01
- Inventor: Yi-Hsien Chang , Chun-Ren Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81C1/00 ; B81B3/00

Abstract:
In the present disclosure a semiconductor device comprises a plate including a plurality of apertures. The semiconductor device also comprises a membrane disposed opposite to the plate and including a plurality of corrugations, a dielectric surrounding and covering an edge of the membrane, and a substrate. The semiconductor device further includes a metallic conductor comprising a first portion extending through the dielectric, and a second portion over the substrate, where the second portion is bonded with the first portion.
Public/Granted literature
- US20170203961A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-07-20
Information query
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