Invention Grant
- Patent Title: Semiconductor device including a sense element and a main element, and current detector circuit using the semiconductor device
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Application No.: US14656054Application Date: 2015-03-12
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Publication No.: US09720029B2Publication Date: 2017-08-01
- Inventor: Kiyoshi Sekigawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2012-274367 20121217
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R19/00 ; H03K17/082 ; H03K17/18

Abstract:
False detection relating to overcurrent is prevented, and it is determined with no dead time whether or not the current of a main element is an overcurrent. By a gate signal indicating conductivity being applied to the gate of a sense element earlier than to a main element when the main element is caused to be conductive, and overshoot caused by a differential circuit of the sense element gate input portion being caused before current flows into the main element, it is possible to prevent false detection relating to overcurrent, and determine with no dead time whether or not the current of the main element is an overcurrent.
Public/Granted literature
- US20150185275A1 SEMICONDUCTOR DEVICE, AND CURRENT DETECTOR CIRCUIT USING THE SEMICONDUCTOR DEVICE Public/Granted day:2015-07-02
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