Invention Grant
- Patent Title: Radiation detector and scintillator panel, and methods for manufacturing same
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Application No.: US15153095Application Date: 2016-05-12
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Publication No.: US09720106B2Publication Date: 2017-08-01
- Inventor: Hiroshi Horiuchi , Hiroshi Aida , Atsuya Yoshida
- Applicant: Toshiba Electron Tubes & Devices Co., Ltd.
- Applicant Address: JP Otawara-shi
- Assignee: Toshiba Electron Tubes & Devices Co., Ltd.
- Current Assignee: Toshiba Electron Tubes & Devices Co., Ltd.
- Current Assignee Address: JP Otawara-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-236666 20131115; JP2013-236667 20131115
- Main IPC: C30B25/02
- IPC: C30B25/02 ; C23C14/34 ; G01T1/202 ; G01T1/20

Abstract:
According to an embodiment, a radiation detector comprises a photoelectric conversion substrate and a scintillator layer. The photoelectric conversion substrate converts light into an electrical signal. The scintillator layer contacts the photoelectric conversion substrate and converts radiation incident from the outside into light. The scintillator layer is a fluorescer of CsI containing Tl as an activator. The CsI is a halide. The concentration of the activator inside the fluorescer is 1.6 mass %±0.4 mass %. The concentration of the activator inside the fluorescer in an in-plane direction of the scintillator layer has the relationship of central portion>peripheral portion. The central portion is a central region of a formation region of the scintillator layer. The peripheral portion is an outer circumferential region of the formation region of the scintillator layer.
Public/Granted literature
- US20160377742A1 RADIATION DETECTOR AND SCINTILLATOR PANEL, AND METHODS FOR MANUFACTURING SAME Public/Granted day:2016-12-29
Information query
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