Invention Grant
- Patent Title: High brightness multijunction diode stacking
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Application No.: US14641093Application Date: 2015-03-06
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Publication No.: US09720145B2Publication Date: 2017-08-01
- Inventor: Manoj Kanskar
- Applicant: nLIGHT Photonics Corporation
- Applicant Address: US WA Vancouver
- Assignee: nLIGHT, Inc.
- Current Assignee: nLIGHT, Inc.
- Current Assignee Address: US WA Vancouver
- Agency: Klarquist Sparkman, LLP
- Main IPC: G02B27/30
- IPC: G02B27/30 ; G02B5/09 ; G02B5/10 ; G02B6/42 ; H01S3/08 ; H01S5/022 ; H01S5/30 ; H01S5/40

Abstract:
An apparatus includes at least one multijunction diode laser situated to emit a plurality of beams along respective mutually parallel propagation axes, each beam having an associated mutually parallel slow axes and associated collinear fast axes, a fast axis collimator situated to receive and collimate the plurality of beams along the corresponding fast axes so as to produce corresponding fast axis collimated beams that propagate along associated non-parallel axes, and a reflector situated to receive the plurality of fast axis collimated beams and to reflect the beams so that the reflected fast axis collimated beams propagate along substantially parallel axes.
Public/Granted literature
- US20150255960A1 HIGH BRIGHTNESS MULTIJUNCTION DIODE STACKING Public/Granted day:2015-09-10
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