- Patent Title: Substrate with a multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography and method of manufacturing the same, and method of manufacturing a semiconductor device
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Application No.: US14908955Application Date: 2014-09-09
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Publication No.: US09720317B2Publication Date: 2017-08-01
- Inventor: Takahiro Onoue
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-188329 20130911
- International Application: PCT/JP2014/073727 WO 20140909
- International Announcement: WO2015/037564 WO 20150319
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/48 ; G03F7/20
Abstract:
A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.
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