Invention Grant
- Patent Title: Power gating in an electronic device
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Application No.: US14731250Application Date: 2015-06-04
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Publication No.: US09720434B2Publication Date: 2017-08-01
- Inventor: James Edward Myers , David Walter Flynn , David William Howard
- Applicant: ARM Limited
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Priority: GB1409983.2 20140605
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; G05F3/08 ; G06F17/50 ; G06F1/32 ; H03K19/00

Abstract:
An electronic device 2 has circuitry 4 which operates in a first voltage domain 6 supplied with a first voltage level VDD1 and a reference voltage level. A voltage regulator 14 generates the first voltage level VDD1 from a second voltage level VDD2 higher than the first voltage level VDD1. At least one power gate 20, 30 is provided for selectively coupling the circuitry 4 to one of the first voltage level VDD1 or the reference level. The control signal 22 for the power gate 20, 30 is generated in a second voltage domain supplied with a higher voltage level VDD2 or VDD3 derived from the second voltage level VDD2 supplied to the voltage regulator 14. Hence, an existing high voltage source within the device 2 can be reused for applying a boosted voltage to power gates to improve efficiency of power gating.
Public/Granted literature
- US20150355662A1 Power Gating in an Electronic Device Public/Granted day:2015-12-10
Information query
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