Invention Grant
- Patent Title: Low power consumption memory device
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Application No.: US14561563Application Date: 2014-12-05
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Publication No.: US09720610B2Publication Date: 2017-08-01
- Inventor: Chih-Cheng Hsiao
- Applicant: Chih-Cheng Hsiao
- Agent Winston Hsu
- Priority: TW103126224A 20140731
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G06F9/46 ; G06F12/00 ; G06F3/06 ; G11C7/12 ; G11C7/18 ; G11C11/412

Abstract:
A memory device includes a plurality of memory modules and a plurality of control lines. Each memory module includes a plurality of memory units. Each memory unit includes: a plurality of memory cell groups, each of which includes at least one memory cell; a plurality of first bit lines, each of which is coupled to the at least one memory cell of a respective memory cell group; a second bit line; and a plurality of controllable circuits, each of which has an input terminal coupled to a respective first bit line, an output terminal coupled to the second bit line, and a control terminal. Each control line is coupled to the control terminal of a corresponding controllable circuit of each of at least one memory unit of each memory module. The memory device consumes relatively small power.
Public/Granted literature
- US20160034220A1 LOW POWER CONSUMPTION MEMORY DEVICE Public/Granted day:2016-02-04
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