Provided are, among others, memory circuits or devices and their applications in electronic devices or systems and various implementations of an electronic device which includes two variable resistance elements in each storage cell, thereby increasing margin and speed of a read operation. One disclosed electronic device includes a semiconductor memory unit which, in one implementation, in addition to two variable resistance elements, further includes a bit line and a bit line bar formed at a metal level; a first word line formed at a transistor level lower than the metal level, and extended in a direction perpendicular to the bit line or the bit line bar; a first selecting element formed at the transistor level and coupled to the bit line and the first word line; a second selecting element formed at the transistor level and coupled to the bit line bar and the first word line.