A method and apparatus for controlled switching of a magnetoresistive random access memory device is disclosed herein. The method includes delivering a current to a magnetoresistive random access memory device, wherein the MRAM device is in a first state, measuring a voltage drop across the magnetoresistive random access memory device in real-time with a resistance detector, wherein a voltage drop beyond a threshold voltage equates to switching from a first state to a second state, the first state different from the second state, determining whether the MRAM device has switched from the first state to the second state, and stopping the current delivered to the magnetoresistive random access memory device.