- Patent Title: Method of writing to a spin torque magnetic random access memory
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Application No.: US15167123Application Date: 2016-05-27
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Publication No.: US09721637B2Publication Date: 2017-08-01
- Inventor: Dimitri Houssameddine
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: EVERSPIN TECHNOLOGIES, INC.
- Current Assignee: EVERSPIN TECHNOLOGIES, INC.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C13/00

Abstract:
A method for determining an optimized write pattern for low write error rate operation of a spin torque magnetic random access memory. The method provides a way to optimize the write error rate without affecting the memory speed. The method comprises one or more write pulses. The pulses may be independent in amplitude, duration and shape. Various exemplary embodiments adjust the write pattern based on the memory operating conditions, for example, operating temperature.
Public/Granted literature
- US20160276011A1 METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2016-09-22
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