A circuit for implementing a write operation of a memory is described. The circuit comprises a data line buffer coupled to a data line and an inverted data line for writing data; a plurality of memory elements, each memory element having a first node coupled to the data line and a second node coupled to the inverted data line; and a write assist circuit having a first node coupled to data line and a second node coupled to the inverted data line, wherein the write assist circuit comprises a pair of pull-down transistors comprising first pull-down transistor coupled to the first node of an amplifier portion and a second pull-down transistor coupled to a second node of the amplifier portion, and a pair of pull-up transistors comprising a first pull-up transistor coupled to the first node of the amplifier portion and a second pull-up transistor coupled to the second node of the amplifier portion. A method of implementing a write operation of a memory of a memory is also described.