A memory device according to one embodiment includes a first interconnection, a second interconnection, a charge storage portion provided between the first interconnection and the second interconnection, a tunnel film provided between the first interconnection and the charge storage portion, and a block film. the charge storage portion is capable of accumulating an electron. The tunnel film includes a fine particulate layer that including conductive fine particulates satisfying the Coulomb blockade condition, a first tunnel insulating layer provided between the first interconnection and the fine particulate layer, and a second tunnel insulating layer provided between the fine particulate layer and the charge storage portion. The block film is provided between the charge storage portion and the second interconnection. The block film has an energy structure in which no concave portion with an energy barrier lower than energy barriers on both sides thereof is present.