Invention Grant
- Patent Title: High voltage switch circuit for switching high voltage without potential drop and semiconductor memory device including the same
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Application No.: US15054467Application Date: 2016-02-26
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Publication No.: US09721667B2Publication Date: 2017-08-01
- Inventor: Yeong Joon Son , Jin Su Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2015-0132419 20150918
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C16/12 ; H03K17/687 ; G11C16/04 ; G11C16/30 ; G11C16/08 ; G11C16/24

Abstract:
There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.
Public/Granted literature
- US20170084339A1 HIGH VOLTAGE SWITCH CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2017-03-23
Information query