Invention Grant
- Patent Title: Method and apparatus for depositing amorphous silicon film
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Application No.: US14915705Application Date: 2014-09-15
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Publication No.: US09721798B2Publication Date: 2017-08-01
- Inventor: Seung-Woo Shin , Hai-Won Kim , Woo-Duck Jung , Sung-Kil Cho , Wan-Suk Oh , Ho-Min Choi , Koon-Woo Lee
- Applicant: EUGENE TECHNOLOGY CO., LTD.
- Applicant Address: KR Yongin-si, Gyeonggi-do
- Assignee: EUGENE TECHNOLOGY CO., LTD.
- Current Assignee: EUGENE TECHNOLOGY CO., LTD.
- Current Assignee Address: KR Yongin-si, Gyeonggi-do
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2013-0125075 20131021
- International Application: PCT/KR2014/008571 WO 20140915
- International Announcement: WO2015/060541 WO 20150430
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L31/18 ; C23C16/24 ; H01L21/285 ; H01L31/20 ; C23C16/44 ; C23C16/455 ; H01L21/768 ; H01L21/3205
Abstract:
Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).
Public/Granted literature
- US20160211141A1 METHOD AND APPARATUS FOR DEPOSITING AMORPHOUS SILICON FILM Public/Granted day:2016-07-21
Information query
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