Invention Grant
- Patent Title: High density second level interconnection for bumpless build up layer (BBUL) packaging technology
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Application No.: US13631392Application Date: 2012-09-28
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Publication No.: US09721878B2Publication Date: 2017-08-01
- Inventor: Bok Eng Cheah , Shanggar Periaman , Kooi Chi Ooi
- Applicant: Bok Eng Cheah , Shanggar Periaman , Kooi Chi Ooi
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L21/56 ; H01L23/538 ; H01L25/10 ; H01L23/00

Abstract:
An apparatus including a die including a device side; and a build-up carrier including a body including a plurality of alternating layers of conductive material and dielectric material disposed on the device side of the die, an ultimate conductive layer patterned into a plurality of pads or lands; and a grid array including a plurality of conductive posts disposed on respective ones of the plurality of pads of the ultimate conductive layer of the body, at least one of the posts coupled to at least one of the contact points of the die through at least a portion of the conductive material of the body. A method including forming a body of a build-up carrier including a die, the body of the build-up carrier including an ultimate conductive layer and forming a grid array including a plurality of conductive posts on the ultimate conductive layer of the body.
Public/Granted literature
- US20140091442A1 HIGH DENSITY SECOND LEVEL INTERCONNECTION FOR BUMPLESS BUILD UP LAYER (BBUL) PACKAGING TECHNOLOGY Public/Granted day:2014-04-03
Information query
IPC分类: