Invention Grant
- Patent Title: Thin-film transistor substrate, display apparatus, method of manufacturing thin-film transistor substrate, and method of manufacturing display apparatus
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Application No.: US14643035Application Date: 2015-03-10
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Publication No.: US09721901B2Publication Date: 2017-08-01
- Inventor: Jihyeon Ryu
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2014-0125249 20140919
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L27/12 ; H01L29/66 ; H01L29/786
Abstract:
Disclosed is a thin-film transistor substrate including: a substrate; a thin-film transistor formed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; an identification (ID) mark formed on the substrate; and a metal layer contacting an upper surface of the ID mark.
Public/Granted literature
Information query
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