Invention Grant
- Patent Title: Backside coupled symmetric varactor structure
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Application No.: US15298124Application Date: 2016-10-19
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Publication No.: US09721946B2Publication Date: 2017-08-01
- Inventor: Daeik Daniel Kim , David Francis Berdy , Je-Hsiung Jeffrey Lan , Changhan Hobie Yun , Jonghae Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L27/108 ; H01L21/70 ; H01L21/8238 ; H01L27/08 ; H01L29/66 ; H01L21/762 ; H01L27/12 ; H01L21/78
Abstract:
A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.
Public/Granted literature
- US20170077093A1 BACKSIDE COUPLED SYMMETRIC VARACTOR STRUCTURE Public/Granted day:2017-03-16
Information query
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