According to one embodiment, a semiconductor device includes a substrate, a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer, a first gate electrode layer, a second gate electrode layer, a gate insulating film, a first interlayer insulating film, a second interlayer insulating film. The first electrode layer is separated from the substrate in a first direction. The second electrode layer is separated from the first electrode layer in a second direction. The third electrode layer is provided between the first electrode layer and the second electrode layer. The third electrode layer includes a first edge face. A second edge face of the first gate electrode layer at the second gate electrode layer side is along the first edge face.