Invention Grant
- Patent Title: Image sensor manufacturing methods
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Application No.: US13445766Application Date: 2012-04-12
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Publication No.: US09721984B2Publication Date: 2017-08-01
- Inventor: Mu-Han Cheng , Kuo-Hsiu Wei , Kei-Wei Chen , Ying-Lang Wang
- Applicant: Mu-Han Cheng , Kuo-Hsiu Wei , Kei-Wei Chen , Ying-Lang Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.
Public/Granted literature
- US20130273686A1 Image Sensor Manufacturing Methods Public/Granted day:2013-10-17
Information query
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